Infineon Technologies N channel HEXFET power MOSFET, 55 V, 85 A, TO-252-3, IRF1010NSTRLPBF
Lifecycle: Active Supply Risk Score and Supply Risk Trend are available on Pro and Enterprise. Watchlist (Pro)
Country of origin: —RoHS CompliantMOSFETs
Bürklin
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Stock & Availability
| Supplier | Supplier Part Number | Stock | Delivery | Factory Lead | MOQ | Packaging | Status |
|---|---|---|---|---|---|---|---|
 | 0 | — | — | Minimum order quantity 800 | piece(s) | No Stock |
Supplier Part Details
Technical Attributes
AssemblySMD
drain-source on resistance RDS (on) max @VGS=10V11Ω
EnclosureTO-252-3
Gate Charge Qg @10V (nC)0C
Max. current85A
max. operating temperature175°C
max. Voltage55V
min. operating temperature-55°C
Power loss180W
SeriesIRF
VersionN channel