Infineon Technologies N channel HEXFET power MOSFET, 60 V, 120 A, TO-220, IRFB3206PBF
Lifecycle: Active Supply Risk Score and Supply Risk Trend are available on Pro and Enterprise. Watchlist (Pro)
Country of origin: CNRoHS CompliantMOSFETs
Bürklin
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520
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1of 1 suppliers
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Stock & Availability
| Supplier | Supplier Part Number | Stock | Delivery | Factory Lead | MOQ | Packaging | Status |
|---|---|---|---|---|---|---|---|
 | 520 | — | — | Minimum order quantity 1 | piece(s) | In Stock |
Supplier Part Details
Technical Attributes
AssemblyTHT
drain-source on resistance RDS (on) max @VGS=10V3Ω
EnclosureTO-220
Gate Charge Qg @10V (nC)0C
Max. current120A
max. operating temperature175°C
max. Voltage60V
min. operating temperature-55°C
Power loss300W
SeriesIRFB
VersionN channel