MDE10N026RH
Search416W 100V 120A 2V 2.3mΩ@10V 1 N-channel N-Channel TO-263 Single FETs, MOSFETs RoHS
Supply Risk Score and Supply Risk Trend are available on Pro and Enterprise. Watchlist (Pro)
Datasheets:Datasheet (LCSC)
Country of origin: —RoHS CompliantMOSFETs
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302
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1of 1 suppliers
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Stock & Availability
| Supplier | Supplier Part Number | Stock | Delivery | Factory Lead | MOQ | Packaging | Status |
|---|---|---|---|---|---|---|---|
 | 302 | — | — | Minimum order quantity 1Order multiple 800 | Tape & Reel (TR) | In Stock |
Supplier Part Details
Technical Attributes
Configuration-
Current - Continuous Drain(Id)120A
Drain to Source Voltage100V
Gate Charge(Qg)147nC
Gate Threshold Voltage (Vgs(th))2V
Input Capacitance(Ciss)10.42nF
Number1 N-channel
Operating Temperature --55℃~+175℃
Output Capacitance(Coss)2.05nF
Pd - Power Dissipation416W
RDS(on)2.3mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)36pF
TypeN-Channel
Vgs±20V